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PTB20082 Datasheet

  • PTB20082

  • 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

  • 4頁(yè)

  • ERICSSON

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PTB 20082
15 Watts, 1.8鈥?.0 GHz
Cellular Radio RF Power Transistor
Description
The 20082 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts
output power, it may be used for both CW and PEP applications. Ion
implantation, nitride surface passivation and gold metallization ensure
excellent device reliability. 100% lot traceability is standard.
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10 Watts Linear Power
Output Power at 1 dB Compressed = 15 W
Class AB Characteristics
30% Collector Efficiency at 7.5 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
20
Output Power (Watts)
16
12
8
4
0
0
1
2
3
4
200
82
LOT
COD
E
V
CC
= 26 V
I
CQ
= 70 mA
f = 2.0 GHz
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
1.4
52
0.29
鈥?0 to +150
3.4
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98

PTB20082 產(chǎn)品屬性

  • TriQuint

  • 射頻放大器

  • 1063802

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