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PTB 20080
25 Watts, 1.6鈥?.7 GHz
RF Power Transistor
Description
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internally-
matched RF power transistor intended for 26 Vdc operation from 1.6
to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
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25 Watts, 1.6鈥?.7 GHz
Class AB Characteristics
40% Collector Efficiency at 25 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power & Efficiency vs. Input Power
40
80
30
60
Output Power (Watts)
20
40
V
CC
= 26 V
10
I
CQ
= 125 mA
f = 1.65 GHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
20
0
0
Efficiency (%)
2008
0
EXX
X
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄 C
Above 25擄 C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
3.4
123
0.7
150
1.43
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98
1
2
3
