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PTB20053 Datasheet

  • PTB20053

  • 60 Watts, 860-900 MHz Cellular Radio RF Power Transistor

  • 3頁

  • ERICSSON

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PTB 20053
60 Watts, 860鈥?00 MHz
Cellular Radio RF Power Transistor
Description
The 20053 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
聲
聲
聲
聲
聲
60 Watts, 860鈥?00 MHz
Class AB Characteristics
50% Collector Efficiency at 60 Watts
Gold Metallization
Silicon Nitride Passivated
Gain vs. Frequency
(as measured in a broadband circuit)
13
12
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 60 W
Gain (dB)
11
10
9
8
7
850
200
53
LOT
CO
DE
860
870
880
890
900
910
Frequency (MHz)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
65
4.0
8.0
145
0.83
鈥?0 to +150
1.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98

PTB20053 產(chǎn)品屬性

  • TriQuint

  • 射頻放大器

  • 1063796

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