MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21312
PS21312
TRANSFER-MOLD TYPE
TRANSFER-MOLD TYPE
INSULATED TYPE
INSULATED TYPE
PS21312
INTEGRATED POWER FUNCTIONS
3rd generation IGBT inverter bridge for 3 phase DC-to-AC
power conversion.
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
鈥?For upper-leg IGBT
S
: Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage (UV) protection.
Note : Bootstrap supply scheme can be applied.
鈥?For lower-leg IGBT
S
: Drive circuit, Control circuit under-voltage protection (UV), Short-circuit protection (SC).
鈥?Fault signaling : Corresponding to a SC fault (Low-side IGBT) or a UV fault (Low-side IGBT).
鈥?Input interface : 5V line CMOS/TTL compatible, Schmitt Trigger receiver circuit.
APPLICATION
AC200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES
HEAT SINK SIDE
(3.556)
(1)
(6.5)
(3.556)
(1.656)
TERMINAL
(0.5)
(1.5)
TERMINAL CODE
(0.5)
VUFS
(UPG)
VUFB
VP1
(COM)
UP
VVFS
(VPG)
VVFB
VP1
(COM)
VP
VWFS
(WPG)
VWFB
VP1
(COM)
WP
(UNG)
VNO(NC)
UN
VN
WN
FO
CFO
CIN
VNC
VN1
(WNG)
(VNG)
P
U
V
W
N
(1)
(1.778
脳
26)
(1.778)
(6.25) (6.25) (6.25)
(8)
(8)
A
(0.5)
DUMMY PIN
(0.5)
(30.5)
(0.75)
29
30
Type name , Lot No.
(
蠁
(
蠁
3
.3)
(17.4)
(17.4)
28 27 26 25 24 23 22 21 20 19 18 16
17
15 13
14
12 10
11
987
654
321
EP
2D
TH
2)
35
34
33
32
31
(7.62
脳
4)
(41)
(42)
(49)
(0.5)
(7.62)
(4MIN)
1
2
3
4
5
PCB
6
(1)
PATTERN 7
8
(1.9) SLIT
9
(1.8MIN)
10
(PCB LAYOUT)
11
Detail A
*Note2
12
13
(5)
14
15
16
17
18
19
20
21
22
23
HEAT SINK SIDE
24
(35
擄)
25
26
27
28
29
30
31
32
33
(1.25)
34
(2.5)
35
(1.2)
(10.5)
*Note1:(***) = Dummy Pin.
*Note 2: In order to increase the surface distance between terminals, cut a slit, etc. on the PCB surface
when mounting a module.
*
Note:
The values used in the above figure are tentative.
Aug. 1999