MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
PS20351-N
PS20351-N
TRANSFER-MOLD TYPE
TRANSFER-MOLD TYPE
INSULATED TYPE
INSULATED TYPE
PS20351-N
INTEGRATED POWER FUNCTIONS
500V/3A low-loss 4th generation (planar) IGBT inverter
bridge for 3 phase DC-to-AC power conversion.
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
鈥?For upper-leg IGBT
S
: Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage (UV) protection.
Note : Bootstrap supply scheme can be applied.
鈥?For lower-leg IGBT
S
: Drive circuit, Control circuit under-voltage protection (UV), Short-circuit protection (SC).
鈥?Fault signaling : Corresponding to a SC fault (Low-side IGBT) or a UV fault (Low-side IGBT).
鈥?Input interface : 5V line CMOS/TTL compatible, Schmitt Trigger receiver circuit.
APPLICATION
AC100V~200V inverter drive for motor control.
Fig. 1 PACKAGE OUTLINES
HEAT SINK SIDE
(3.556)
(1)
TERMINAL
(0.5)
(3.556)
(1.656)
(0.5)
Dimensions in mm
TERMINAL CODE
VUFS
(UPG)
VUFB
VP1
(COM)
UP
VVFS
(VPG)
VVFB
VP1
(COM)
VP
VWFS
(WPG)
VWFB
VP1
(COM)
WP
(UNG)
VNO(NC)
UN
VN
WN
FO
CFO
CIN
VNC
VN1
(WNG)
(VNG)
P
U
V
W
N
(1)
(0.5)
DUMMY PIN
(1.778
脳
26)
(1.778)
(6.25) (6.25) (6.25)
(8)
(8)
A
(0.5)
(30.5)
(0.75)
29
30
Type name , Lot No.
(
蠁
2
(
蠁
3
.3)
(17.4)
(17.4)
28 27 26 25 24 23 22 21 20 19 18 16
17
15 13
14
12 10
11
987
654
321
D
T
EP
H
2)
35
34
33
32
31
(7.62
脳
4)
(41)
(42)
(49)
(0.5)
(7.62)
(4MIN)
1
2
3
4
5
PCB
6
(1)
PATTERN 7
8
(1.9) SLIT
9
(1.8MIN)
10
(PCB LAYOUT)
11
Detail A
*Note2
12
13
(5)
14
15
16
17
18
19
20
21
22
23
HEAT SINK SIDE
24
(35
擄
)
25
26
27
28
29
30
31
32
33
(1.25)
34
(2.5)
35
(6.5)
(10.5)
(1.5)
(1.2)
*Note1:(***) = Dummy Pin.
*Note 2: In order to increase the surface distance between terminals, cut a slit, etc. on the PCB surface
when mounting a module.
Sep. 2001