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PPC INC.

7516 Central Industrial Drive

Riviera Beach, FL 33404

PH: 561-842-0305

Fax: 561-845-7813

PPNGZ52F120A

PPNHZ52F120A

Features

鈥?/div>

Rugged polysilicon gate cell structure

high current handling capability, latch-proof

Hermetically sealed package

Low package inductance

Very low thermal resistance

Reverse polarity available upon request: PPNH(G)Z52F120B

high frequency IGBT, low switching losses

anti-parallel FREDiode (PPNHZ52F120A only)

TO-258

1200 Volts

52 Amps

3.2 Volts vce(sat)

N-CHANNEL

INSULATED GATE BIPOLAR

TRANSISTOR

Maximum Ratings @ 25擄 C (unless otherwise specified)

擄

DESCRIPTION

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)

@ T

J

鈮?/div>

25擄C

SYMBOL

BV

CES

BV

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM(25)

I

CM(90)

E

AS

I

C(sc)

I

C(sc)RBSOA

P

D

T

j

T

stg

I

S

I

SM

胃

JC

MAX.

1200

+/-20

+/-30

52

33

104

66

65

260

66

300

-55 to +150

50

100

0.42

UNIT

Volts

Amps

mJ

A

Watts

擄C

Amps

擄C/W

Collector-to-Gate Breakdown Voltage

@ T

J

鈮?/div>

25擄C, R

GS

= 1 M鈩?/div>

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Continuous Collector Current

Tj= 25擄C

Tj= 90擄C

Peak Collector Current (pulse width limited by T

jmax

,)

Tj= 25擄C

Tj= 90擄C

Avalanche energy (single pulse)

@ I

C

= 25A, V

CC

= 50V, L= 200碌H,

Short circuit current (SOA) ,

Short circuit (reverse) current (RBSOA) ,

V

CE

鈮?/div>

1200V, T

J

= 150擄C

Power Dissipation

Junction Temperature Range

Storage Temperature Range

Continuous Source Current (Body Diode, PPNHZ52F120A only)

Pulse Source Current (Body Diode, PPNHZ52F120A only)

Thermal Resistance, Junction to Case

R

G

= 25鈩? Tj= 25擄C

V

CE

鈮?/div>

1200V, T

J

= 150擄C, t

sc

鈮?/div>

10碌s

Datasheet# MSC1376.PDF

型號

版本

描述

廠商

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PPNHZ52F12...

英文版

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

MICROSEMI

PPNHZ52F120A
PPNHZ52F12...

英文版

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

MICROSEMI ...

PPNHZ52F120A

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