Photo IC
PNZ7103
Bipolar Integrated Circuit with Photodetection Function
Unit : mm
1.5鹵0.2
For photoelectric sensor systems
Features
Built-in amplifier circuit
Small plastic package (flat type)
12.5 min.
10 min.
3-0.45鹵0.2
0.45鹵0.2
Absolute Maximum Ratings
(Ta = 25藲C)
1.27
1.27
Parameter
Power supply voltage
Operating supply voltage sensitivity
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CC
V
C
P
D
T
opr
T
stg
Ratings
+15
+3.0 to +3.5
100
鈥?5 to +85
鈥?40 to +100
Unit
V
mW
藲C
藲C
1
2 3
1: GND
2: V
OUT
3: V
CC
Electro-Optical Characteristics
(V
CC
= 3.2V, R
L
= 5.1k鈩? Ta = 25藲C
鹵
3藲C)
Parameter
Current consumption without incident light
Photoelectric sensitivity (AC)
Output noise voltage without signal
Symbol
I
CC
A
V
ON
位
= 780nm
位
= 950nm
144
Conditions
min
typ
1.4
180
200
0.9
max
2.2
216
Unit
mA
V/mW
mVrms
,,,
1
Not soldered 2.0
4.5鹵0.15
3.5鹵0.15
1.1
2.1鹵0.15
1.6鹵0.15
0.8鹵0.1
3.9鹵0.25
(2.4)
0.8
1
