PIN Photodiodes
PNZ312D
Dual Division Silicon PIN Photodiode
Unit : mm
For optical information systems
Features
Fast response : t
r
, t
f
= 10 ns (typ.)
13.5鹵1.0
4.0鹵0.1
1.0鹵0.3
1.0鹵0.1
Good photo current linearity
Low dark current : I
D
= 20 nA (max.)
Small size plastic package (flat type)
Adoption of visible light cutoff resin
A
B
4-0.6
+0.1
鈥?.2
4-0.5鹵0.1
1
10藲
1.0
1.0
10藲
酶3.2 Dep. 0.1(typ.)
10藲
5.0鹵0.1
2.54鹵0.1
4
3
1.8鹵0.3
1.0鹵0.2
0.2
+0.1
鈥?.05
2
0藲
1
0.2
0.6
Applications
Auto focus sensor for still cameras and video cameras etc.
Distance measuring systems
Position sensor for automatic assembly lines
Eye sensor for industrial robots
5藲
5藲
1: Anode A
2: Common Cathode
3: Anode B
4: Common Cathode
Note) The PNZ312D package consists of a visible
light cutoff resin. Therefore the chips (A and B)
shown in the drawing cannot actually be seen.
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
30
鈥?5 to +85
鈥?0 to +100
Unit
V
mW
藲C
藲C
Dimensions of detection area
3.5
1.6
1.6
0.04
Unit : mm
1.35
1.0
A
B
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Acceptance half angle
Symbol
V
R
I
D
I
L*3
位
P
t
r
, t
f*2
C
t
胃
I
R
= 10碌A
V
R
= 10V
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 1k鈩?/div>
V
R
= 10V, f = 1MHz
Measured from the optical axis to the half power point
8
12
940
10
5
65
Conditions
min
30
20
typ
max
Unit
V
nA
碌A
nm
ns
pF
deg.
Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values
corresponding to individual elements.
*1
*2
Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source.
Semiconductor laser light source (
位
= 800 nm )
*3
Photo current measurement circuit
+10V
R
1
= R
2
R
1
R
2
,
,
,
,,
1
1
2
