PIN Photodiodes
PNZ3108
PIN Photodiode
Unit : mm
For optical control systems
1.0鹵0.1
5.0鹵0.1
2.54鹵0.1
4
3
1.8鹵0.3
0.8鹵0.2
0.6鹵0.1
Features
High sensitivity and low dark current
For one-dimensional light-point position detection
Good positional linearity
Small plastic package
13.5鹵1.0
4.0鹵0.1
1.0鹵0.3
1.0鹵0.3
4-0.6
+0.1
鈥?.2
1.0鹵0.1
5藲
5藲
4-0.5鹵0.15
1
10藲
0.2
+0.1
鈥?.05
2
10藲
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
30
鈥?5 to +85
鈥?0 to +100
Unit
V
mW
藲C
藲C
1.1
0.8
5藲
5藲
1: Anode 1
2: Common cathode
3: Anode 2
4: Common cathode
Dimensions of detection area
2.1
1.5
Unit : mm
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Resistance between electrodes
Gradient of position signal
*1
I
L
Symbol
I
D
I
L*1
位
P
t
r
, t
f*2
C
t
R
S*3
a
*4
V
R
= 1V
Conditions
V
R
= 1V, L = 1000 lx
V
R
= 1V,
位
= 900nm, E = 1mW/cm
2
V
R
= 1V
V
R
= 1V, R
L
= 1k鈩?/div>
V
R
= 1V, f = 1MHz
V
R
= 1V, V
a
= 0.5V
V
R
= 1V
min
7
typ
12
8
940
5
8
250
0.133
max
2
Unit
nA
碌A(chǔ)
碌A(chǔ)
nm
碌s
pF
k鈩?/div>
= I
1
+ I
2
Note: I
1
and I
2
are the photoelectric currents of anodes A1 and A2.
White tungsten lamp light source (color temperature T = 2856K)
*2
GaAs light emitting diode light source (
位
= 800nm)
*3
V is the potential difference between anodes A1 and A2.
a
*4
a = | (I 鈥揑 )/(I +I ) |
1 2
1 2
Note : Incident light is at the position 100
碌m
from the reference position.
The reference position is the position where I
1
= I
2.
1
1
2
