Darlington Phototransistors
PNZ263L
Darlington Phototransistor
0.8 max.
Gate the rest
Unit : mm
3.0鹵0.3
酶1.1
R0.5
Not soldered
2.15 max.
For optical control systems
Features
Darlington output, high sensitivity
Small size, thin side-view type package
Adoption of visible light cutoff resin
1.95鹵0.25
1.4鹵0.2
0.9
0.5
28.0
+1.0
鈥?.5
14.3
0.8
1.35
3.5鹵0.3
1.1
2.4
1.1 0.8
2-0.8 max.
(8.9)
2.4
2-0.8 max.
0.3鹵0.15
2-0.5鹵0.15
2
1
2.54
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
鈥?5 to +80
鈥?0 to +100
Unit
V
V
mA
mW
藲C
藲C
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
*1
*2
Symbol
I
CEO
S
IR*1
位
P
胃
t
r
, t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, H = 3.75
碌W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
C
= 1mA, R
L
= 100鈩?/div>
I
C
= 100碌A(chǔ), H = 3.75
碌W/cm
2
min
60
typ
0.1
200
850
25
150
0.7
max
0.5
Unit
碌A(chǔ)
碌A(chǔ)
nm
deg.
碌s
1.5
V
Measurements were made using infrared light (位 = 940 nm) as a light source.
Switching time measuring circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
next
1
2
