Phototransistors
PNZ163NC
(PN163-(NC))
Silicon NPN Phototransistor
3.5鹵0.3
Gate the rest
2.4 1.1 0.8 max.
1.1
0.8
Unit : mm
3.0鹵0.3
1.95鹵0.25
1.4鹵0.2
0.9
0.5
For optical control systems
Features
High sensitivity
Fast response : t
r
= 4
碌s
(typ.)
Adoption of visible light cutoff resin
Ultraminiature, thin side-view type package
酶1.1
R0.5
12 min.
Not soldered 2.15 max.
2-0.5鹵0.15
0.3鹵0.15
2
2.54
1
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
I
C
P
C
T
opr
T
stg
Ratings
20
20
50
鈥?5 to +85
鈥?0 to +100
Unit
V
mA
mW
藲C
藲C
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
*1
*2
Symbol
I
CEO
S
IR*1
位
P
胃
t
r*2
t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, H = 15碌W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100鈩?/div>
I
CE(L)
= 3碌A(chǔ), H = 15碌W/cm
2
min
6
typ
max
0.2
40
Unit
碌A(chǔ)
碌A(chǔ)
nm
deg.
碌s
碌s
850
25
4
4
0.5
V
Measurements were made using infrared light (位 = 940 nm) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
;;
;;
;;
50鈩?/div>
R
L
Note) The part number in the parenthesis shows conventional part number.
1
1
2
3
