鈩?/div>
I
CE(L)
=
1 mA, L
=
1 000 lx
0.2
0.5
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be dis regarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
Sig. out
R
L
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
50
鈩?/div>
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00018BED
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