Phototransistors
PNZ150L
Silicon NPN Phototransistor
Unit : mm
酶3.5鹵0.2
4.8鹵0.3
2.4 2.4
Not soldered
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Small size, thin side-view type package
4.5鹵0.3
4.2鹵0.3
2.3
1.9
42.7鹵1.0
2.2
14.5
2.95
1.0
2-1.12
2-0.45鹵0.15
0.4鹵0.15
1.2
2-0.6鹵0.15
2-0.45鹵0.15
1
2
2.54
R1.75
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
I
C
P
C
T
opr
T
stg
Ratings
20
20
100
鈥?5 to +85
鈥?0 to +100
Unit
V
mA
mW
藲C
藲C
1: Emitter
2: Collector
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Sensitivity to infrared emitters
Collector saturation voltage
Peak sensitivity wavelength
Response time
Acceptance half angle
*1
Symbol
I
CEO
S
IR*1
V
CE(sat)
位
P
t
r
, t
f*2
胃
V
CEO
= 10V
Conditions
V
CE
= 10V, H = 15碌W/cm
2
V
CE
= 10V, H = 15碌W/cm
2
V
CEO
= 10V
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100鈩?/div>
Measured from the optical axis to the half power point
min
16
typ
0.01
0.2
800
4
35
max
0.2
0.5
Unit
碌A(chǔ)
碌A(chǔ)
V
nm
碌s
deg.
Measurements were made using infrared light (位 = 940 nm) as a light source.
*2
Response time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
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