Phototransistors
PNZ1270
Silicon NPN Phototransistor
Unit : mm
For optical control systems
0.5鹵0.1
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Small size designed for easier mounting to printed circuit board
2.8鹵0.2
1.05鹵0.1
Type number : Emitter mark (Blue)
10.0 min.
10.0 min.
3.2鹵0.3 3.2鹵0.3
酶1.8
2
1
45
藲
2.2鹵0.15
(0.7)
0.15
(0.7)
1.8
2.8鹵0.2 1.8
Fast response : t
r
= 2.5
碌s
(typ.)
R0.9
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
20
50
鈥?5 to +85
鈥?0 to +100
Unit
V
V
mA
mW
藲C
藲C
0.85
鹵
0.15
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
*1
*2
Symbol
I
CEO
I
CE(L)*3
位
P
胃
t
r*2
t
f*2
V
CE
= 10V
Conditions
V
CE
= 10V, L = 1000 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100鈩?/div>
min
0.8
typ
1
800
14
2.5
3.5
max
100
19.2
Unit
nA
mA
nm
deg.
碌s
碌s
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
,,
50鈩?/div>
R
L
*3
I
CE(L)
Classifications
Class
I
CE(L)
(mA)
Q
0.8 to 2.4
R
1.6 to 4.8
S
3.2 to 9.6
T
6.4 to 19.2
0.4鹵0.1
1
1
2
