鈩?/div>
I
CE(L)
=
1 mA, L
=
1 000 lx
Min
3
1.0
Typ
Max
Unit
碌A
mA
I
CEO
位
p
胃
t
r
t
f
V
CE(sat)
5
800
50
3
3
0.2
500
nA
nm
擄
碌s
碌s
Collector-emitter saturation voltage
*1
0.5
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
5. *1: Source: Tungsten (color temperature 2 856 K)
*2: Rank classification
Rank
I
CE(L)1
I
CE(L)2
QL
3 to 16
5 typ.
RL
10 to 30
6 typ.
SL
>24
8 typ.
Q
錚?/div>
1.0 to 5.0
R
錚?/div>
4.0 to 9.0
S
錚?/div>
>7.0
*3: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
Sig. out
R
L
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
50
鈩?/div>
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00014BED
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