Phototransistors
PNZ115
(PN115)
Silicon NPN Phototransistor
Unit : mm
For optical control systems
酶3.5鹵0.2
4.5鹵0.3
Not soldered
4.2鹵0.3
2.3 1.9
Features
High sensitivity
Wide directional sensitivity, matched to GaAs LEDs :
胃
= 35 deg.
(typ.)
Fast response : t
r
= 5
碌s
(typ.)
Side-view type package
2.0
4.8鹵0.3
2.4 2.4
12.5 min.
10.0 min.
3-0.45鹵0.2
0.45鹵0.2
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
20
30
5
5
10
100
鈥?5 to +85
鈥?0 to +100
Unit
V
V
V
V
mA
mW
藲C
藲C
1 2 3
1.27
1.27
1.2
1: Emitter
2: Collector
3: Base
Photo-
detectors
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
*1
*2
Symbol
I
CEO
I
CE(L)
位
P
胃
t
r*2
t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100鈩?/div>
I
CE(L)
= 1mA, L = 1000 lx
*1
min
2.0
typ
0.02
4.5
900
35
5
6
0.3
max
2
Unit
碌A(chǔ)
mA
nm
deg.
碌s
碌s
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
;;;
;
;
;
50鈩?/div>
R
L
Note) The part number in the parenthesis shows conventional part number.
1
1
2
3
