Phototransistors
PNZ109F
Silicon NPN Phototransistor
Unit : mm
For optical control systems
Features
Flat window design which is suited to optical systems
Built-in filter to cutoff visible light for reducing ambient light noise
Peak sensitivity wavelength matched with infrared light emitting
devices :
位
p
= 900 nm (typ.)
Fast response : t
r
= 8
碌s
(typ.)
Long lifetime, high reliability
4.5鹵0.2
酶4.6鹵0.15
Glass window
12.7 min.
3-酶0.45鹵0.05
2.54鹵0.25
2
0.
0
鹵
1.
1.
0
鹵
0.
15
3藲
45
鹵
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
20
30
3
5
30
150
鈥?5 to +85
鈥?0 to +100
Unit
V
V
V
V
mA
mW
藲C
藲C
3
2 1
1: Emitter
2: Base
3: Collector
酶5.75 max.
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Collector photo current
Peak sensitivity wave length
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
*1
*2
Symbol
I
CEO
I
CE(L)
位
P
胃
t
r*2
t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, L = 100
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA
R
L
= 100鈩?/div>
I
CE(L)
= 1mA, L = 1000 lx
*1
lx
*1
min
0.3
typ
0.05
900
40
8
9
0.3
max
2
Unit
碌A
mA
nm
deg.
碌s
碌s
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
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