Phototransistors
PNZ0109
Silicon NPN Phototransistor
酶5.08鹵0.15
Unit : mm
For optical control systems
Features
High sensitivity
16.0鹵1.0
2.67鹵0.15
4.8 max.
Wide spectral sensitivity
The most suitable detector for GaAs LEDs
Fast response : t
r
, t
f
= 3
碌s
(typ.)
Base pin for easy circuit design
酶0.5鹵0.05
2-酶0.45
2.54
0.
15
4.
8
鹵
Wide directional sensitivity :
胃
= 80 deg. (typ.)
1
鹵
3藲
45藲
2
3
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
20
30
5
5
20
100
鈥?5 to +85
鈥?0 to +100
Unit
V
V
V
V
mA
mW
藲C
藲C
1.27
1: Emitter
2: Base
2: Collector
2.
03
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
*1
Symbol
I
CEO
I
CE(L)
位
P
胃
t
r*2
t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, L = 500 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100鈩?/div>
I
CE(L)
= 1mA, L = 1000 lx
*1
min
0.8
typ
0.05
2
800
80
3
3
0.25
max
1
Unit
碌A(chǔ)
mA
nm
deg.
10
10
0.5
碌s
碌s
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,,
,
,
,
50鈩?/div>
R
L
Note) Please make a thorough study of the specifications.
1
1
2
