Phototransistors
PNZ0106
Silicon NPN Phototransistor
酶4.6鹵0.15
Unit : mm
Glass lens
For optical control systems
Features
High sensitivity
12.7 min.
6.3鹵0.3
Fast response : t
r
= 3.5
碌s
(typ.)
Narrow directional sensitivity for effective use of light input
Signal mixing capability using base pin
3-酶0.45鹵0.05
2.54鹵0.25
0
鹵
1.
0.
2
15
3藲
45
鹵
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
30
40
5
5
20
100
鈥?5 to +85
鈥?0 to +100
Unit
V
V
V
V
mA
mW
藲C
藲C
1.
0
鹵
3
2 1
0.
酶5.75 max.
1: Emitter
2: Base
2: Collector
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
*1
*2
Symbol
I
CEO
I
CE(L)
位
P
胃
t
r*2
t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, L = 100
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100鈩?/div>
I
CE(L)
= 1 mA, L = 1000 lx
*1
lx
*1
min
0.3
typ
1
0.6
800
10
3.5
5.0
0.2
max
100
Unit
nA
mA
nm
deg.
碌s
碌s
0.4
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,,
,
,
,
next
1
2
