Photo IC
PNA4S11M
Series
(PNA4S11M/4S12M/4S13M/4S14M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Features
Surface-mounting type for reflow soldering
Space saved by miniaturization
Ready for automatic mounting
7.6
(3.8)
Unit : mm
5.2
(2.6)
1
2
3.47
R1.7
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CC
P
D
T
opr
T
stg
Ratings
鈥?0.5 to +7
200
鈥?0 to +60
鈥?30 to +70
Unit
V
mW
藲C
藲C
3
4
1: V
O
2: V
CC
3: GND
4: GND
Main Characteristics
(Ta = 25藲C V
CC
= 5V)
Parameter
Operating supply voltage
Current consumption
Maximum reception distance
Low-level output voltage
High-level output voltage
Low-level pulse width
High-level pulse width
PNA4S11M
Carrier frequency
PNA4S12M
PNA4S13M
PNA4S14M
*1
Symbol
V
CC
I
CC
L
max*1
V
OL*2
V
OH
T
WL*1
T
WH*1
Conditions
No signal condition
L鈮?.0m, 10L=400碌A
No signal condition
L=7.0m, 16Pulse
L=7.0m, 16Pulse
min
4.7
1.8
7.0
typ
5.0
2.4
0.35
max
5.3
3.0
0.5
V
CC
600
600
Unit
V
mA
m
V
V
碌s
碌s
4.8
200
200
5.0
400
400
36.7
38.0
40.0
56.9
f
0
kHz
Fig.1 burst wave, L=L
max
, 16 pulses
Carrier wave : f
o
*2
Fig.2 continuous wave, L鈮
max
Carrier wave : f
o
400碌s
400碌s
Fig.1
Fig.2
1
1
2
3
