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PIN Photodiodes

PNA3W01L

(PN307)

PIN Photodiode

Unit : mm

For optical control systems

0.5鹵0.1

Features

High sensitivity, high reliability

Peak sensitivity wavelength matched with infrared light emitting

diodes :

位

p

= 800 nm (typ.)

1.05鹵0.1

Type number : Emitter mark (Yellow)

10.0 min.

10.0 min.

3.2鹵0.3 3.2鹵0.3

酶1.8

2

1

藲

2.2鹵0.15

(0.7)

0.15

(0.7)

45

1.8

2.8鹵0.2 1.8

Double end type small size package

R0.9

2.8鹵0.2

Absolute Maximum Ratings

(Ta = 25藲C)

Parameter

Reverse voltage (DC)

Power dissipation

Operating ambient temperature

Storage temperature

Symbol

V

R

P

D

T

opr

T

stg

Ratings

30

10

鈥?5 to +85

鈥?0 to +100

Unit

V

mW

藲C

藲C

0.85

鹵

0.15

1: Cathode

2: Anode

Electro-Optical Characteristics

(Ta = 25藲C)

Parameter

Dark current

Photo current

Peak sensitivity wavelength

Acceptance half angle

*

Symbol

I

D

I

L

位

P

胃

V

R

= 10V

Conditions

V

R

= 10V, L = 1000 lx

*

V

R

= 10V

Measured from the optical axis to the half power point

min

5

typ

max

50

Unit

nA

碌A(chǔ)

nm

deg.

800

24

Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

Note) The part number in the parenthesis shows conventional part number.

0.4鹵0.1

1

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