PIN Photodiodes
PNA3602L
PIN Photodiode
Unit : mm
For optical control systems
4.5鹵0.3
1.2
Not soldered
2.9鹵0.25
酶2.4
3.9鹵0.3
2.4 1.5
Features
High quantum efficiency
High-speed response
Small size, thin side-view type package
12.8 min.
0.9
1.7鹵0.2
0.8
2.8
2-1.2鹵0.3
2-0.45鹵0.15
1
2.54
2
0.45鹵0.15
R1.2
R0.6
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
100
鈥?5 to +85
鈥?0 to +100
Unit
V
mW
藲C
藲C
1: Anode
2: Cathode
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Acceptance half angle
*1
*2
Symbol
I
D
I
L
位
P
t
r
, t
f*2
C
t
胃
V
R
= 10V
Conditions
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 50鈩?/div>
V
R
= 10V, f = 1MHz
Measured from the optical axis to the half power point
min
16
typ
0.1
850
2
6
45
max
10
Unit
nA
碌A(chǔ)
nm
ns
pF
deg.
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
R
= 10V
(Input pulse)
Sig.OUT
(Output pulse)
R
L
t
d
t
r
t
f
90%
10%
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
位
P
= 800nm
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