鈥?/div>
Small size designed for easier mounting to printed circuit board
0.5鹵0.1
1
10.0 min.
3.2鹵0.3
蠁1.8
3.2鹵0.3
10.0 min.
2
擄
(0.7)
(0.7)
0.15
1.05鹵0.1
R0.9
s
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Rating
20
5
30
100
鈭?5
to
+85
鈭?0
to
+100
Unit
V
V
mA
mW
擄C
擄C
2.8鹵0.2
0.85鹵0.15
s
Electro-Optical Characteristics
T
a
=
25擄C
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
Symbol
I
CEO
I
CE(L)
位
P
胃
t
r
, t
f *2
V
CE(sat)
V
CE
=
10 V
V
CE
=
10 V, L
=
2 lx
*1
V
CE
=
10 V
Measured from the optical axis to the
half power point
V
CC
= 10 V, I
CE(L)
=
5 mA, R
L
=
100
鈩?/div>
I
CE(L)
=
1 mA, L
=
100 lx
*1
0.5
Conditions
Min
Typ
0.1
3
800
18
200
0.7
1.5
Max
0.5
Unit
碌A
mA
nm
擄
碌s
V
Note) *1: Measurements were made using a tungsten lamp (color temperature T
=
2856 K) as a light source.
*2: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
Sig. out (Output pulse)
R
L
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
:
Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
50
鈩?/div>
2.2鹵0.15
1.8
2.8鹵0.2
1.8
1: Collector
2: Emitter
0.4鹵0.1
45
1
1
2
