Darlington Phototransistors
PNA2602M
Darlington Phototransistor
Unit : mm
酶3.5鹵0.2
4.8鹵0.3
2.4 2.4
4.5鹵0.3
Not soldered
For optical control systems
Features
Darlington output, high sensitivity
36.6鹵0.5
4.2鹵0.3
2.3
1.9
Easy to combine light emission and photodetection on same
printed circuit board
Small size, thin side-view type package
Long lead and visible light cutoff design with PN205
2-1.12
2-0.45鹵0.15
2-0.4鹵0.15
14.5
2.95
1.0
1.2
2.2鹵0.2
2-0.6鹵0.15
2-0.45鹵0.15
1
2
2.54
R1.75
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
鈥?5 to +80
鈥?0 to +100
Unit
V
V
mA
mW
藲C
藲C
1: Emitter
2: Collector
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
*1
Symbol
I
CEO
S
IR*1
位
P
胃
t
r
, t
f*2
V
CE(sat)
*1
Conditions
V
CE
= 10V
V
CE
= 10V, H = 3.75
碌W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
C
= 1mA, R
L
= 100鈩?/div>
I
C
= 100碌A(chǔ), H = 3.75
碌W/cm
2
min
0.1
typ
max
0.5
3.0
Unit
碌A(chǔ)
mA
nm
deg.
碌s
850
35
150
1.5
V
Measurements were made using infrared light (位 = 940 nm) as a light source.
*2
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
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