Darlington Phototransistors
PNA2601M
Silicon NPN Phototransistor
0.5 max.
Gate the rest
Unit : mm
2.6鹵0.2
C 0.5
0.8
1.45鹵0.2
1.2鹵0.2
(0.4)
For optical control systems
Features
Darlington output, high sensitivity
Small size, thin side-view type package
Adoption of visible light cutoff resin
2.5鹵0.2
1.7 0.8
R0.55
Gate the rest
2.0
0.7
2-0.7
12.5鹵1.0
2-0.45鹵0.15
0.15
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
35
6
30
75
鈥?5 to +65
鈥?0 to +85
Unit
V
V
mA
mW
藲C
藲C
2
1
2.0
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
*1
Symbol
I
CEO
S
IR*1
位
P
胃
t
r
, t
f*2
V
CE(sat)
Conditions
V
CE
= 10V
V
CE
= 10V, H = 3.75
碌W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
C
= 1mA, R
L
= 100鈩?/div>
I
C
= 100碌A(chǔ), H = 3.75
碌W/cm
2
min
20
typ
0.1
850
max
0.5
Unit
碌A(chǔ)
碌A(chǔ)
nm
deg.
碌s
35
150
0.7
1.5
V
Measurements were made using infrared light (位 = 940 nm) as a light source.
*2
Switching time measuring circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
1
