Phototransistors
PNA1605
Silicon NPN Phototransistor
Unit : mm
1.5鹵0.2
For optical control systems
Features
High sensitivity
Wide directional sensitivity, matched to GaAs LEDs :
胃
= 70 deg.
(typ.)
Fast response : t
r,
t
f
= 8
碌s
(typ.)
Side-view type package
4.5鹵0.15
3.5鹵0.15
Not soldered 2.0
2.1鹵0.15
1.6鹵0.15
0.8鹵0.1
12.5 min.
10 min.
3.9鹵0.25
(2.4)
3-0.45鹵0.2
0.45鹵0.2
1.27
1.27
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
20
30
5
5
10
100
鈥?5 to +85
鈥?0 to +100
Unit
V
V
V
V
mA
mW
藲C
藲C
1
2 3
1: Emitter
2: Collector
3: Base
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
*1
*2
Symbol
I
CEO
I
CE(L)
位
P
胃
t
r*2
t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA
R
L
= 100鈩?/div>
I
CE(L)
= 1mA, L = 1000 lx
*1
min
0.2
typ
0.05
0.8
900
70
8
9
0.3
max
2
Unit
碌A(chǔ)
mA
nm
deg.
碌s
碌s
0.6
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,,
,
,
,
next
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