Phototransistors
PNA1601
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting various kinds of LEDs
12.5鹵1.0
0.8
0.5 max.
Gate the rest
Unit : mm
1.4鹵0.2
1.2鹵0.2
(0.4)
2.6鹵0.2
C0.5 0.8
R0.55
2.0
0.7
2.5鹵0.2
1.7
Ultraminiature, thin side-view type package
2-0.7
2-0.45
0.15
2
1
2.0
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
I
C
P
C
T
opr
T
stg
Ratings
20
20
50
鈥?5 to +65
鈥?0 to +85
Unit
V
mA
mW
藲C
藲C
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
*1
*2
Symbol
I
CEO
S
IR*1
位
P
胃
t
r*2
t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, H = 15碌W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100鈩?/div>
I
CE(L)
= 10碌A(chǔ), H = 15碌W/cm
2
min
3
typ
max
0.2
Unit
碌A(chǔ)
碌A(chǔ)
nm
deg.
碌s
碌s
850
35
4
4
0.5
V
Measurements were made using infrared light (位 = 940 nm) as a light source.
Switching time measuring circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
,,
next
1
2
