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PNA1601M Datasheet

  • PNA1601M

  • Silicon NPN Phototransistor

  • 4頁

  • PANASONIC

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Phototransistors
PNA1601M
(PN166)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting various kinds of LEDs
12.5鹵1.0
0.8
0.5 max.
Gate the rest
Unit : mm
1.4鹵0.2
1.2鹵0.2
(0.4)
2.6鹵0.2
C0.5 0.8
R0.55
2.0
0.7
2.5鹵0.2
1.7
Ultraminiature, thin side-view type package
2-0.7
2-0.45
0.15
2
1
2.0
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
I
C
P
C
T
opr
T
stg
Ratings
20
20
50
鈥?5 to +65
鈥?0 to +85
Unit
V
mA
mW
藲C
藲C
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
*1
*2
Symbol
I
CEO
S
IR*1
位
P
胃
t
r*2
t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, H = 15碌W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100鈩?/div>
I
CE(L)
= 10碌A(chǔ), H = 15碌W/cm
2
min
3
typ
max
0.2
Unit
碌A(chǔ)
碌A(chǔ)
nm
deg.
碌s
碌s
850
35
4
4
0.5
V
Measurements were made using infrared light (位 = 940 nm) as a light source.
Switching time measuring circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
;;
;;
;;
50鈩?/div>
R
L
Note) The part number in the parenthesis shows conventional part number.
1

PNA1601M 產(chǎn)品屬性

  • PNA1601M View all Specifications

  • 1,000

  • 傳感器，轉(zhuǎn)換器

  • 光學(xué) - 光電檢測(cè)器 - 光電晶體管

  • *

  • 20V

  • 20mA

  • 200nA

  • 850nm

  • 70°

  • 50mW

  • 通孔

  • 側(cè)視圖

  • 徑向

  • PN166PN166-ND

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