PN4302
PN4302
N-Channel General Purpose Amplifier
鈥?This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources.
鈥?Sourced from process 52.
1
TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Ratings
30
-30
50
-55 ~ 150
Units
V
V
mA
擄C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
I
DSS
Parameter
Test Condition
I
G
= -1.0碌A, V
DS
= 0
V
GS
= -10V, V
DS
= 0
V
DS
= 20V, I
D
= 1.0nA
V
DS
= -15V, V
GS
= 0
0.5
Min.
-30
-1.0
-4.0
5.0
Max.
Units
V
nA
V
mA
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
On Characteristics
Thermal Characteristics
T
a
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
125
357
Units
mW
mW/擄C
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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