PN4117 / PN4118 / PN4119 / MMBF4117 / MMBF4118 / MMBF4119
Discrete POWER & Signal
Technologies
PN4117
PN4118
PN4119
MMBF4117
MMBF4118
MMBF4119
G
D
G
S
TO-92
D
SOT-23
Mark: 61A / 61C / 61E
S
N-Channel Switch
This device is designed for low current DC and audio applications.
These devices provide excellent performance as input stages for
sub-picoamp instrumentation or any high impedance signal
sources. Sourced from Process 53.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
,T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25擄C unless otherwise noted
Parameter
Value
40
- 40
50
-55 to +150
Units
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN4117
350
2.8
125
357
Max
*MMBF4117
225
1.8
556
Units
mW
mW/擄C
擄C/W
擄C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
茫
1997 Fairchild Semiconductor Corporation