PN4117A
PN4117A
N-Channel Switch
鈥?This device is designed for low current DC and audio application.
These devices provide excellent performance as input stages for sub-
picoamp instrumentation or any high impedance signal sources.
鈥?Sourced from process 53.
1
TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings *
T
A
=25擄C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and storage Temperature Range
Parameter
Value
40
-40
50
- 55 ~ 150
Units
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
A
=25擄C unless otherwise noted
Symbol
Parameter
Test Condition
V
DS
= 0, I
G
= -1碌A(chǔ)
V
DS
= -10V, I
D
= 1.0nA
V
DS
= 0V, V
GS
= -20V
V
DS
= 10V, V
GS
= 0
V
DS
= 10V, V
GS
= 0
f = 1.0KHz
V
DS
= 10V, V
GS
= 0
f = 1KHz
V
DS
= 10V, V
GS
= 0
f = 30MHz
V
DS
= 10V, V
GS
= 0
f = 1.0KHz
V
DS
= 10V, V
GS
= 0
f = 1.0MHz
60
3.0
1.5
30
70
Min.
-40
-0.6
-1.8
-1.0
90
210
3.0
Typ.
Max.
Units
V
V
pA
碌A(chǔ)
mmhos
mmhos
mmhos
pF
pF
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage
V
GS
(off)
I
GSS
Gate-Source Cutoff Voltage
Gate Reverse Current
On Characteristics
Zero-Gate Voltage Drain Current *
I
DSS
Small Signal Characteristics
gfs
g
OSS
R
E
(
YFS
)
C
ISS
C
rss
Common Source Forward Transconductance
Common Source Output Conductance
Common Source Forward Conductance
Input Capacitance
Reverse Transfer Capacitance
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
1.0%
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Max.
350
2.8
125
357
Units
mW
mW/擄C
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
1
2
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