PN3566
PN3566
NPN General Purpose Amplifier
鈥?This device is for use as a medium amplifier and switch requiring
collector currents up 300mA.
鈥?Sourced from process 19.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
30
40
5
600
- 55 ~ 150
Units
V
V
V
mA
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 30mA, I
B
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 10V, I
C
= 2.0mA
V
CE
= 10V, I
C
= 10mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CB
= 10V, I
E
= 0
80
150
Min.
30
40
5
50
10
Typ.
Max.
Units
V
V
V
nA
碌A(chǔ)
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
On Characteristics
h
FE
DC Current Gain
V
CE
(sat)
V
BE
(on)
Collector-Emitter Saturation Voltage *
Base-Emitter On Voltage
600
1.0
0.9
25
V
V
pF
Small Signal Characteristics
C
obo
Output Capacitance
* Pulse Test: Pulse Width
鈮?/div>
300ms, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
a
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
R
胃JC
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Parameter
Max.
625
5
83.3
200
Units
mW
mW/擄C
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
1
2
3
