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PN323 Datasheet

  • PN323

  • Silicon planar type

  • 3頁

  • PANASONIC

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PIN Photodiodes
PNZ323
(PN323)
Silicon planar type
For optical control systems
Chip
4.6
鹵0.2
(2.3)
Not soldered 1.5 max.
Unit: mm
鈻?/div>
Features
鈥?/div>
Fast response which is well suited to high speed modulated light
detection: t
r
, t
f
=
50 ns (typ.)
鈥?/div>
High sensitivity, high reliability
鈥?/div>
Peak emission wavelength matched with infrared light emitting
diodes:
位
p
=
900 nm (typ.)
鈥?/div>
Wide detection area, wide half-power angle:
胃 =
70擄 (typ.)
鈥?/div>
Adoption of visible light cutoff resin
6.0
鹵0.2
7.5
鹵0.2
5.5
鹵0.2
(2)
31.25
鹵1.0
1.5
鹵0.2
(0.5)
(1.0)
(1.32)
(2-0.6
鹵0.1
)
22.25
鹵1.0
0.5
鈻?/div>
Absolute Maximum Ratings
Parameter
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
T
a
=
25擄C
Symbol
V
R
P
D
T
opr
T
stg
Rating
30
100
鈭?0
to
+85
鈭?0
to
+100
Unit
V
mW
擄C
擄C
(1.5)
(2.54)
(2.3)
0.6
鹵0.1
3.8
鹵0.2
1
1: Anode
2: Cathode
LSRLR102NC-001 Package
2
鈻?/div>
Electrical-Optical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Dark current
Photocurrent
*1
Sensitivity to infrared radiation
*2
Peak emission wavelength
Rise time
*2
Symbol
I
D
I
L
S
IR
位
p
t
r
t
f
t
r
t
f
C
t
胃
V
R
=
10 V
Conditions
V
R
=
10 V, L
=
1 000 lx
V
R
=
5 V, H
=
0.1 mW/cm
2
V
R
=
10 V
V
R
=
10 V, R
L
=
1 k鈩?/div>
V
R
=
10 V, R
L
=
100 k鈩?/div>
V
R
=
0 V, f
=
1 MHz
The angle from which photocurrent
becomes 50%
Min
Typ
5
55
Max
50
Unit
nA
碌A(chǔ)
碌A(chǔ)
nm
ns
ns
碌s
碌s
pF
擄
4.5
6.0
900
50
50
5
5
70
70
Fall time
*2
Rise time
*2
Fall time
*2
Terminal capacitance
Half-power angle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Source: Infrared radiation (位
=
940 nm)
*3: Switching time measurement circuit
Sig. in
位
P
=
900 nm
50
鈩?/div>
R
L
V
R
(Input pulse)
Sig. out
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00036BED
1

PN323相關(guān)型號PDF文件下載

  • 型號
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    描述
    廠商
    下載
  • 英文版
    Silicon planar type
    PANASONIC
  • 英文版
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    PANASONIC ...
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    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | TO-92
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | TO-92
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | TO-92
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | TO-92
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-92
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-92
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-92
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-92

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