鈩?/div>
Symbol
I
D
I
L
V
R
=
10 V
V
R
=
10 V, L
=
1 000 lx
30
5
Conditions
Min
1: Anode
2: Cathode
MTGFR102-001 Package
Typ
0.1
55
7
800
1
1
7
10
40
Max
10
Unit
nA
碌A(chǔ)
nm
ns
ns
pF
擄
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
位
P
=
900 nm
50
鈩?/div>
R
L
V
R
(Input pulse)
Sig. out
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004
SHE00030BED
1
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