PN2907A
Preferred Device
General Purpose Transistor
PNP Silicon
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation
@ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation
@ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
鈥?5 to
+150
Watts
mW/擄C
擄C
1
2
Unit
擄C/W
擄C/W
3
mW
mW/擄C
Value
鈥?0
鈥?0
鈥?.0
鈥?00
Unit
Vdc
Vdc
Vdc
mAdc
2
BASE
1
EMITTER
COLLECTOR
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
胃JA
R
胃JC
Max
200
83.3
TO鈥?2
CASE 29
STYLE 1
MARKING DIAGRAM
PN2
907A
YWW
PN2907A = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
PN2907A
PN2907ARLRA
Package
TO鈥?2
TO鈥?2
Shipping
5000 Units/Box
2000/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
August, 2001 鈥?Rev. 0
Publication Order Number:
PN2907A/D