鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base voltage (Emitter open)
Emitter-collector voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Rating
20
30
5
5
10
100
鈭?5
to
+85
鈭?0
to
+100
Unit
V
V
V
V
mA
mW
擄C
擄C
1.27
1.27
1
2
3
1: Emitter
2: Collector
3: Base
LSTFR103-001 Package
鈻?/div>
Electrical-Optical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Photocurrent
*1
Dark current
Peak emission wavelength
Half-power angle
Rise time
*2
Fall time
*2
Collector-emitter saturation voltage
*1
Symbol
I
CE(L)
I
CEO
位
p
胃
t
r
t
f
V
CE(sat)
I
CE(L)
=
1 mA, L
=
1 000 lx
V
CE
=
10 V
V
CE
=
10 V
The angle from which photocurrent
becomes 50%
V
CC
=
10 V, I
CE(L)
=
1 mA, R
L
=
100
鈩?/div>
Conditions
V
CE
=
10 V, L
=
100 lx
Min
0.2
Typ
0.8
0.05
900
70
8
9
0.3
0.6
2.00
Max
Unit
mA
碌A(chǔ)
nm
擄
碌s
碌s
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
Sig. out (Output pulse)
R
L
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time
t
f
:
Fall time
50
鈩?/div>
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00003BED
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