12.7 min.
1.
0.
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base voltage (Emitter open)
Emitter-collector voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
*
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Rating
30
40
5
5
50
150
鈭?5
to
+85
鈭?0
to
+100
Unit
V
V
V
V
mA
mW
擄C
擄C
1.
0
鹵
0.
擄
3
2
1
1: Emitter
2: Base
蠁5.75
max.
3: Collector
MTGLR103-001 Package
Note) *: The rate of electric power reduction is 1.5 mW/擄C above T
a
= 25擄C.
鈻?/div>
Electrical-Optical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Photocurrent
Dark current
Peak emission wavelength
Half-power angle
Rise time
*2
Fall time
*2
Collector-emitter saturation voltage
*1
*1
Symbol
I
CE(L)
I
CEO
位
p
胃
t
r
t
f
V
CE(sat)
V
CE
=
10 V
V
CE
=
10 V
Conditions
V
CE
=
10 V, L
=
100 lx
Min
1.5
Typ
3.5
5
800
10
3
3
Max
Unit
mA
300
nA
nm
擄
碌s
碌s
The angle from which photocurrent
becomes 50%
V
CC
=
10 V, I
CE(L)
=
5 mA, R
L
=
100
鈩?/div>
I
CE(L)
=
1 mA, L
=
500 lx
0.2
0.4
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
Sig. out
R
L
(Output pulse)
t
r
t
f
90%
10%
t
r
: Rise time
t
f
:
Fall time
50
鈩?/div>
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00005BED
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