碌TrenchMOS鈩?/div>
extremely low level FET
MBD128
Rev. 01 鈥?13 February 2004
Product data
1. Product pro鏗乴e
1.1 Description
N-channel enhancement mode 鏗乪ld-effect transistor in a plastic package using
TrenchMOS鈩?technology.
1.2 Features
s
Surface mounted package
s
Low on-state resistance
s
Footprint 40% smaller than SOT23
s
Low threshold voltage.
1.3 Applications
s
Driver circuits
s
Switching in portable appliances.
1.4 Quick reference data
s
V
DS
鈮?/div>
30 V
s
P
tot
鈮?/div>
0.69 W
s
I
D
鈮?/div>
0.96 A
s
R
DSon
鈮?/div>
440 m鈩?
2. Pinning information
Table 1:
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simpli鏗乪d outline and symbol
Description
drain (d)
drain (d)
gate (g)
source (s)
drain (d)
MBB076
Simpli鏗乪d outline
6
5
4
Symbol
d
g
s
drain (d)
1
Top view
2
3
MSA370
SOT363 (SC-88)
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