PMEM1505PG
PNP transistor/Schottky recti鏗乪r module
Rev. 01 鈥?26 May 2004
Product data sheet
1. Product pro鏗乴e
1.1 General description
Combination of an PNP transistor with low V
CEsat
and high current capability and a planar
Schottky barrier recti鏗乪r with an integrated guard ring for stress protection in a SOT353
(SC-88A) small plastic package. NPN complement: PMEM1505NG.
1.2 Features
s
s
s
s
s
s
300 mW total power dissipation
Current capability up to 0.5 A
Reduces printed-circuit board area required
Reduces pick and place costs
Small plastic SMD package
Transistor
x
Low collector-emitter saturation voltage.
s
Diode
x
Ultra high-speed switching
x
Very low forward voltage
x
Guard ring protected.
1.3 Applications
s
s
s
s
s
DC-to-DC converters
Inductive load drivers
General purpose load drivers
Reverse polarity protection circuits
MOSFET drivers.
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
V
R
I
F
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
continuous reverse voltage
continuous forward current
Conditions
open base
continuous
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
鈭?5
鈭?.5
20
0.5
Unit
V
A
V
A
PNP transistor
Schottky barrier recti鏗乪r
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.