an
==
AMP
wmDanv
5
=
Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty
PI-f2731 -75L
2.7 - 3.1 GHz
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Effkiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic鈥楳etaUCeramic Package
Absolute Maximum Ratings at 25擄C
Parameter
Symbol
Rating
65
3.0
7.0
Units
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
Junction Temperature
StorageTemperature
VCES
VES0
鈥榗
PTOi
TJ
TSW
V
V
A
w
/
鈥淐
.167=.010
190
200
I
UNLYSS
O-HfRW:S:
KGTZD,
Y--RANKS
ARE
.06O=.CO3
u.s2:.05:
iNCHES
:MILL,METERS
1鈥?/div>
=.005-鈥?/div>
r,13MMj
-65 to+200
j
0~
Electrical Characteristics
at 25擄C
Broadband Test Fixture Impedances
F(GHr)
2.70
2.90
3.10
TZST
?iXTdR鈥?/div>
INPUT
1
f.:RCLI:T
TEST
rIXTURE
OUTPUT
CiRtUIT
Z,,(Q)
6.9 - j12.2
Z,,(Q)
4.5 - j6.8
I
6.0 - jl 1.7
5.2-j10.0
I
3.9
- j6.1
i
-
I
3.4 - j4.8
Specifications Subject to Change Without Notlce.
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