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PHX6NA60E Datasheet

  • PHX6NA60E

  • PowerMOS transistors Low capacitance Avalanche energy rated

  • 5頁

  • PHILIPS

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Philips Semiconductors
Objective specification
PowerMOS transistors
Low capacitance
Avalanche energy rated
FEATURES
鈥?Repetitive Avalanche Rated
鈥?Fast switching
鈥?Low feedback capacitance
鈥?Stable off-state characteristics
鈥?High thermal cycling performance
鈥?Low thermal resistance
PHX6NA60E
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 600 V
g
I
D
= 3.9 A
R
DS(ON)
鈮?/div>
1.2
鈩?/div>
s
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect
power
transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHX6NA60E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN
1
2
3
case
gate
drain
source
isolated
DESCRIPTION
SOT186A
case
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 藲C to 150藲C
T
j
= 25 藲C to 150藲C; R
GS
= 20 k鈩?/div>
T
hs
= 25 藲C; V
GS
= 10 V
T
hs
= 100 藲C; V
GS
= 10 V
T
hs
= 25 藲C
T
hs
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
鹵
30
3.9
2.6
26
45
150
UNIT
V
V
V
A
A
A
W
藲C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
E
AR
I
AS
, I
AR
Single pulse avalanche
energy
Repetitive avalanche energy
1
Avalanche current
CONDITIONS
Unclamped inductive load, ID = 6.5A;
V
DD
鈮?/div>
50 V; starting T
j
= 25藲C; R
GS
= 50
鈩?
V
GS
= 10 V
MIN.
-
-
-
MAX.
570
9.5
6.5
UNIT
mJ
mJ
A
1
pulse width and repetition rate limited by T
j
max.
January 1998
1
Rev 1.000

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