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PHX4ND40E Datasheet

  • PHX4ND40E

  • PowerMOS transistors FREDFET, Avalanche energy rated

  • 76.38KB

  • 8頁

  • PHILIPS

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Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
FEATURES
鈥?Repetitive Avalanche Rated
鈥?Fast switching
鈥?Stable off-state characteristics
鈥?High thermal cycling performance
鈥?Isolated package
鈥?Fast reverse recovery diode
PHX4ND40E
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 400 V
I
D
= 2.7 A
g
R
DS(ON)
鈮?/div>
1.8
鈩?/div>
s
t
rr
= 180 ns
SOT186A
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect
power
transistor,
incorporating a
Fast Recovery
Epitaxial Diode
(FRED). This gives
improved switching performance in
half bridge and full bridge
converters making this device
particularly suitable for inverters,
lighting ballasts and motor control
circuits.
The PHX4ND40E is supplied in the
SOT186A full pack isolated
package.
PINNING
PIN
1
2
3
case
gate
drain
source
isolated
DESCRIPTION
case
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
1
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 藲C to 150藲C
T
j
= 25 藲C to 150藲C; R
GS
= 20 k鈩?/div>
T
hs
= 25 藲C; V
GS
= 10 V
T
hs
= 100 藲C; V
GS
= 10 V
T
hs
= 25 藲C
T
hs
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
400
400
鹵
30
2.7
1.7
18
30
150
UNIT
V
V
V
A
A
A
W
藲C
August 1998
1
Rev 1.100

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