PHX45NQ11T
N-channel TrenchMOS鈩?standard level FET
Rev. 01 鈥?17 May 2004
Product data
1. Product pro鏗乴e
1.1 Description
N-channel enhancement mode 鏗乪ld-effect transistor in a fully isolated encapsulated
plastic package using TrenchMOS鈩?technology.
1.2 Features
s
Low on-state resistance
s
Isolated package.
1.3 Applications
s
DC-to-DC converters
s
Switched-mode power supplies.
1.4 Quick reference data
s
V
DS
鈮?/div>
110 V
s
P
tot
鈮?/div>
62.5 W
s
I
D
鈮?/div>
30.4 A
s
R
DSon
鈮?/div>
25 m鈩?
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT186A (TO-220F) simpli鏗乪d outline and symbol
Description
gate (g)
drain (d)
source (s)
mounting base;
isolated
g
mbb076
Simpli鏗乪d outline
mb
Symbol
d
s
1 2 3
MBK110
SOT186A (TO-220F)
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