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PHX3055E Datasheet

  • PHX3055E

  • N-channel TrenchMOS transistor

  • 8頁(yè)

  • PHILIPS

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Philips Semiconductors
Product specification
N-channel TrenchMOS鈩?transistor
PHX3055E
FEATURES
鈥?/div>
鈥橳rench鈥?/div>
technology
鈥?Low on-state resistance
鈥?Fast switching
鈥?Isolated mounting tab
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 55 V
I
D
= 9 A
g
R
DS(ON)
鈮?/div>
150 m鈩?(V
GS
= 10 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode,
field-effect power transistor in a
plastic envelope with an electrically
isolated mounting tab. The device
uses 鈥檛rench鈥?technology to achieve
low on-state resistance.
Applications:-
鈥?d.c. to d.c. converters
鈥?switched mode power supplies
The PHX3055E is supplied in the
SOT186A (isolated TO220AB)
conventional leaded package.
PINNING
PIN
1
2
3
tab
gate
drain
source
isolated
DESCRIPTION
SOT186A
case
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 藲C to 150藲C
T
j
= 25 藲C to 150藲C; R
GS
= 20 k鈩?/div>
T
hs
= 25 藲C
T
hs
= 100 藲C
T
hs
= 25 藲C
T
hs
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
鹵
20
9
5.6
36
21
150
UNIT
V
V
V
A
A
A
W
藲C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 藲C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
鈮?/div>
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
August 1999
1
Rev 1.000

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