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PHX2N50E Datasheet

  • PHX2N50E

  • PowerMOS transistors Avalanche energy rated

  • 8頁

  • PHILIPS

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Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
FEATURES
鈥?Repetitive Avalanche Rated
鈥?Fast switching
鈥?Stable off-state characteristics
鈥?High thermal cycling performance
鈥?Isolated package
PHX2N50E
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 500 V
g
I
D
= 1.4 A
R
DS(ON)
鈮?/div>
5
鈩?/div>
s
GENERAL DESCRIPTION
N-channel, enhancement mode
field-effect
power
transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
The PHX2N50E is supplied in the
SOT186A full pack, isolated
package.
PINNING
PIN
1
2
3
case
gate
drain
source
isolated
DESCRIPTION
SOT186A
case
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 藲C to 150藲C
T
j
= 25 藲C to 150藲C; R
GS
= 20 k鈩?/div>
T
hs
= 25 藲C; V
GS
= 10 V
T
hs
= 100 藲C; V
GS
= 10 V
T
hs
= 25 藲C
T
hs
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
鹵
30
1.4
0.9
8
25
150
UNIT
V
V
V
A
A
A
W
藲C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
MIN.
-
MAX.
82
UNIT
mJ
Unclamped inductive load, I
AS
= 1.26 A;
t
p
= 0.2 ms; T
j
prior to avalanche = 25藲C;
V
DD
鈮?/div>
50 V; R
GS
= 50
鈩?
V
GS
= 10 V; refer
to fig:17
Repetitive avalanche energy
1
I
AR
= 2 A; t
p
= 2.5
碌s;
T
j
prior to
avalanche = 25藲C; R
GS
= 50
鈩?
V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
E
AR
I
AS
, I
AR
-
-
3.3
2
mJ
A
1
pulse width and repetition rate limited by T
j
max.
December 1998
1
Rev 1.200

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