Philips Semiconductors
Objective Specification
PowerMOS transistor
Isolated version of PHP1N60E
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a full
pack, plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
PHX1N60E
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
600
1.3
25
6
UNIT
V
A
W
鈩?/div>
PINNING - SOT186A
PIN
1
2
3
gate
drain
source
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DS
V
DGR
鹵V
GS
I
D
I
DM
I
DR
I
DRM
P
tot
T
stg
T
j
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
R
GS
= 20 k鈩?/div>
T
hs
= 25 藲C
T
hs
= 100 藲C
T
hs
= 25 藲C
T
hs
= 25 藲C
T
hs
= 25 藲C
T
hs
= 25 藲C
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
600
600
30
1.3
0.83
5.2
1.3
5.2
25
150
150
UNIT
V
V
V
A
A
A
A
A
W
藲C
藲C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
CONDITIONS
MIN.
MAX.
UNIT
Drain-source non-repetitive I
D
= 1.9 A; V
DD
鈮?/div>
50 V; V
GS
= 10 V;
unclamped inductive turn-off R
GS
= 50
鈩?/div>
energy
T
j
= 25藲C prior to surge
T
j
= 100藲C prior to surge
Drain-source repetitive
I
D
= 1.9 A; V
DD
鈮?/div>
50 V; V
GS
= 10 V;
unclamped inductive turn-off R
GS
= 50
鈩?
T
j
鈮?/div>
150 藲C
energy
W
DSR1
-
-
-
120
20
3.6
mJ
mJ
mJ
1. Pulse width and frequency limited by T
j(max)
November 1996
1
Rev 1.000
PHX1N60E相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
PowerMOS transistor
PHILIPS
-
英文版
PowerMOS transistor
PHILIPS [P...
-
英文版
PowerMOS transistor Isolated version of PHP2N40E
PHILIPS
-
英文版
PowerMOS transistor Isolated version of PHP2N40E
PHILIPS [P...
-
英文版
PowerMOS transistor Isolated version fo PHP1N50E
PHILIPS
-
英文版
PowerMOS transistor Isolated version fo PHP1N50E
PHILIPS [P...
-
英文版
PowerMOS transistor Isolated version of PHP1N60E
PHILIPS
-
英文版
PowerMOS transistor Isolated version of PHP1N60E
PHILIPS [P...
-
英文版
PowerMOS transistors Avalanche energy rated
PHILIPS
-
英文版
PowerMOS transistors Avalanche energy rated
PHILIPS [P...
-
英文版
PowerMOS transistor Isolated version of PHP20N06E
PHILIPS
-
英文版
PowerMOS transistor Isolated version of PHP20N06E
PHILIPS [P...
-
英文版
N-channel TrenchMOS standard level FET
PHILIPS
-
英文版
N-channel TrenchMOS standard level FET
PHILIPS [P...
-
英文版
N-channel TrenchMOS transistor
PHILIPS
-
英文版
N-channel TrenchMOS transistor
PHILIPS [P...
-
英文版
N-channel TrenchMOS standard level FET
PHILIPS
-
英文版
N-channel TrenchMOS standard level FET
PHILIPS [P...
-
英文版
N-channel enhancement mode field-effect transistor
PHILIPS
-
英文版
N-channel enhancement mode field-effect transistor
PHILIPS [P...
1
2
3
4
5
