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PHW8ND50E Datasheet

  • PHW8ND50E

  • PowerMOS transistors FREDFET, Avalanche energy rated

  • 10頁

  • PHILIPS

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Philips Semiconductors
Product specification
PowerMOS transistors
PHP8ND50E, PHB8ND50E, PHW8ND50E
FREDFET, Avalanche energy rated
FEATURES
鈥?Repetitive Avalanche Rated
鈥?Fast switching
鈥?Stable off-state characteristics
鈥?High thermal cycling performance
鈥?Low thermal resistance
鈥?Fast reverse recovery diode
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 500 V
I
D
= 8.5 A
g
R
DS(ON)
鈮?/div>
0.85
鈩?/div>
s
t
rr
= 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a
Fast Recovery Epitaxial Diode
(FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly
suitable for inverters, lighting ballasts and motor control circuits.
The PHP8ND50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHW8ND50E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB8ND50E is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
gate
drain
1
source
SOT78 (TO220AB)
tab
SOT404
tab
SOT429 (TO247)
2
drain
1 23
1
3
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 藲C to 150藲C
T
j
= 25 藲C to 150藲C; R
GS
= 20 k鈩?/div>
T
mb
= 25 藲C; V
GS
= 10 V
T
mb
= 100 藲C; V
GS
= 10 V
T
mb
= 25 藲C
T
mb
= 25 藲C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
鹵
30
8.5
5.4
34
147
150
UNIT
V
V
V
A
A
A
W
藲C
1
It is not possible to make connection to pin 2 of the SOT404 package.
August 1998
1
Rev 1.100

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