鈮?/div>
55 m鈩?(V
GS
= 4.5 V)
S3
G1
S1
G2
S2
G3
GENERAL DESCRIPTION
Six n-channel, enhancement
mode, logic level, field-effect
power transistors and six schottky
diodes configured as three
half-bridges. This device has low
on-state resistance and fast
switching.
The
intended
application is in computer disk and
tape drives as a three phase
brushless d.c. motor driver.
The PHN603S is supplied in the
SOT137-1
(SO24)
surface
mounting package.
PINNING
PIN
1,4
2
3
5,8
6
7
9,12
10
11
13
14-16, 18-20, 22-24
17
21
DESCRIPTION
drain 1
source 1
gate 1
drain 2
source 2
gate 2
drain 3
source 3
gate 3
gate 4
drain 4
gate 5
gate 6
SOT137-1 (SO24)
Top view
1
24
12
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
P
tot
T
stg
, T
j
PARAMETER
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current per device (DC)
Drain current per device (pulse
peak value)
Total power dissipation per device
Total power dissipation all devices
conducting
Storage & operating temperature
CONDITIONS
T
j
= 25 藲C to 150藲C
T
j
鈮?/div>
80 藲C
1
R
GS
= 20 k鈩?/div>
T
a
= 25 藲C
T
a
= 100 藲C
T
a
= 25 藲C
T
a
= 25 藲C
T
a
= 100 藲C
T
a
= 25 藲C
T
a
= 100 藲C
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
25
25
25
鹵
20
5.5
3.5
22
1.67
0.67
2.78
1.11
150
UNIT
V
V
V
V
A
A
A
W
W
W
W
藲C
1
The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited
by thermal runaway.
October 1998
1
Rev 1.000
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