PHM18NQ15T
TrenchMOS鈩?standard level FET
Rev. 02 鈥?20 August 2004
M3D879
Product data
1. Product pro鏗乴e
1.1 Description
N-channel enhancement mode 鏗乪ld-effect transistor in a plastic package using
TrenchMOS鈩?technology.
1.2 Features
s
SOT96 (SO-8) footprint compatible
s
Surface mounted package
s
Low thermal resistance
s
Low pro鏗乴e.
1.3 Applications
s
DC-to-DC converter primary side
switch
s
Portable equipment applications.
1.4 Quick reference data
s
V
DS
鈮?/div>
150 V
s
P
tot
鈮?/div>
62.5 W
s
I
D
鈮?/div>
19 A
s
R
DSon
鈮?/div>
75 m鈩?
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
mb
Pinning - SOT685-1 (QLPAK), simpli鏗乪d outline and symbol
Description
source (s)
gate (g)
drain (d)
mounting base;
connected to drain (d)
1
4
Simpli鏗乪d outline
Symbol
d
mb
g
mbb076
8
Bottom view
5
MBL585
s
SOT685-1 (QLPAK)
[1]
Shaded area indicates pin 1 identi鏗乪r.
next