PHM12NQ20T
TrenchMOS鈩?standard level FET
Rev. 01 鈥?30 January 2003
Preliminary data
1. Product pro鏗乴e
1.1 Description
N-channel enhancement mode 鏗乪ld-effect transistor in a plastic package using
TrenchMOS鈩?technology.
Product availability:
PHM12NQ20T in SOT685-1 (QLPAK).
1.2 Features
s
SOT96 (SO-8) footprint compatible
s
Surface mount package
s
Low thermal resistance
s
Low pro鏗乴e.
1.3 Applications
s
DC-DC converter primary side switch
s
Portable equipment applications.
1.4 Quick reference data
s
V
DS
鈮?/div>
200 V
s
P
tot
鈮?/div>
62.5 W
s
I
D
鈮?/div>
14.4 A
s
R
DSon
鈮?/div>
130 m鈩?
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
mb
Pinning - SOT685 (QLPAK), simpli鏗乪d outlines and symbol
Description
source (s)
gate (g)
drain (d)
mounting base,
connected to drain (d)
1
4
d
Simpli鏗乪d outline
Symbol
mb
g
s
8
Bottom view
5
MBL585
MBB076
SOT685-1 (QLPAK)
[1]
Shaded area indicates pin 1 identi鏗乪r
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